IMT2AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Collector Base Voltage (VCBO) :

-60V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Transistor Type :

2 PNP (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

-6V

Transistor Application :

AMPLIFIER

hFE Min :

120

Number of Elements :

2

Operating Temperature :

150°C TJ

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Package / Case :

SC-74, SOT-457

Gain Bandwidth Product :

140MHz

Transition Frequency :

140MHz

JESD-609 Code :

e1

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

300mW

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

VCEsat-Max :

0.5 V

Max Collector Current :

150mA

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

500mV

Max Power Dissipation :

300mW

Number of Pins :

6

Current Rating :

-150mA

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Pin Count :

6

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Mount :

Surface Mount

Voltage - Rated DC :

-50V

Published :

2004

Base Part Number :

MT2