IMH6AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transition Frequency :

250MHz

Terminal Form :

Gull wing

Number of Elements :

2

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Lead Free :

Lead Free

Polarity :

NPN

JESD-30 Code :

R-PDSO-G6

Package / Case :

SC-74, SOT-457

Continuous Collector Current :

100mA

VCEsat-Max :

0.3 V

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

300mW

Resistor - Emitter Base (R2) :

47k Ω

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

HTS Code :

8541.21.00.75

Resistor - Base (R1) :

47k Ω

Operating Supply Voltage :

50V

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Power Dissipation :

300mW

Max Breakdown Voltage :

50V

Published :

2004

ECCN Code :

EAR99

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.2

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

30mA

Height :

1.2mm

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

Factory Lead Time :

10 Weeks

Width :

1.8mm

Frequency - Transition :

250MHz

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Mount :

Surface Mount

Max Output Current :

100mA

JESD-609 Code :

e1

Number of Pins :

74

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Length :

3mm

hFE Min :

68

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

TIN SILVER COPPER

Min Operating Temperature :

-55°C

Base Part Number :

*MH6