IMH5AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

300mV

Transistor Application :

SWITCHING

Radiation Hardening :

No

VCEsat-Max :

0.3 V

HTS Code :

8541.21.00.95

Element Configuration :

Dual

Number of Elements :

2

Max Collector Current :

100mA

Number of Terminations :

6

Polarity :

NPN

Resistor - Emitter Base (R2) :

22k Ω

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Frequency - Transition :

250MHz

Mount :

Surface Mount

Voltage - Rated DC :

50V

Resistor - Base (R1) :

22k Ω

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Current Rating :

30mA

Power Dissipation :

300mW

Number of Pins :

6

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Min Operating Temperature :

-55°C

Published :

2008

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Current - Collector Cutoff (Max) :

500nA

hFE Min :

56

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Pbfree Code :

yes

Base Part Number :

*MH5

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

REACH SVHC :

No SVHC

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Package / Case :

SC-74, SOT-457

Packaging :

Tape and Reel (TR)