IMD6AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR

Max Operating Temperature :

150°C

hFE Min :

100

REACH SVHC :

No SVHC

Current Rating :

100mA

Operating Supply Voltage :

50V

Max Power Dissipation :

300mW

JESD-609 Code :

e1

Lead Free :

Lead Free

HTS Code :

8541.21.00.75

Terminal Form :

Gull wing

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Transistor Application :

SWITCHING

Element Configuration :

Dual

DC Current Gain-Min (hFE) :

100

Radiation Hardening :

No

Factory Lead Time :

7 Weeks

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Max Breakdown Voltage :

50V

VCEsat-Max :

0.3 V

Polarity :

NPN, PNP

Package / Case :

SMD/SMT

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Published :

2004

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Transition Frequency :

250MHz

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Max Output Current :

100mA

Number of Terminations :

6