IMD3AT108
- Mfr.Part #
- IMD3AT108
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN/PNP PREBIAS 0.3W SMT6
- Stock
- 37,554
- In Stock :
- 37,554
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Max Collector Current :
- 100mA
- Element Configuration :
- Dual
- REACH SVHC :
- No SVHC
- Length :
- 3mm
- Max Output Current :
- 100mA
- Base Part Number :
- *MD3
- Min Operating Temperature :
- -55°C
- Frequency - Transition :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- JESD-609 Code :
- e1
- hFE Min :
- 30
- Additional Feature :
- DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 500nA
- ECCN Code :
- EAR99
- Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Operating Supply Voltage :
- 50V
- VCEsat-Max :
- 0.3 V
- Max Operating Temperature :
- 150°C
- Polarity :
- NPN, PNP
- Lead Free :
- Lead Free
- Package / Case :
- SC-74, SOT-457
- Published :
- 2005
- Number of Elements :
- 2
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 300mV
- Max Breakdown Voltage :
- 50V
- HTS Code :
- 8541.21.00.75
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 300mW
- Transition Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 50mA
- Number of Terminations :
- 6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Height :
- 1.2mm
- Resistor - Emitter Base (R2) :
- 10k Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- Width :
- 1.8mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Factory Lead Time :
- 13 Weeks
- Resistor - Base (R1) :
- 10k Ω
- Radiation Hardening :
- No
- Pin Count :
- 6
- Datasheets
- IMD3AT108

IMD3AT108 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available at
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