IMB9AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

10k Ω

Base Part Number :

MB9

Continuous Collector Current :

-70mA

Polarity :

PNP

Transistor Type :

2 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Voltage - Rated DC :

-50V

Transition Frequency :

250MHz

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75

Max Operating Temperature :

150°C

JESD-609 Code :

e1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Min Operating Temperature :

-55°C

Number of Pins :

6

Max Output Current :

100mA

Pbfree Code :

yes

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Operating Supply Voltage :

50V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

250MHz

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

hFE Min :

68

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation :

300mW

Mounting Type :

Surface Mount

Published :

2004

Number of Elements :

2

Radiation Hardening :

No

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7

Factory Lead Time :

7 Weeks

Max Power Dissipation :

300mW

Transistor Application :

SWITCHING

Package / Case :

SC-74, SOT-457

Collector Emitter Breakdown Voltage :

50V

Current Rating :

-70mA

Current - Collector Cutoff (Max) :

500nA

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Voltage (VCEO) :

300mV

VCEsat-Max :

0.3 V

Element Configuration :

Dual