HUFA76419D3ST
- Mfr.Part #
- HUFA76419D3ST
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- N-CHANNEL LOGIC LEVEL ULTRAFET
- Stock
- 227
- In Stock :
- 227
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2002
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 16V
- Width :
- 6.22mm
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 35ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 20A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±16V
- JEDEC-95 Code :
- TO-252AA
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Weight :
- 260.37mg
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 50 ns
- Power Dissipation-Max :
- 75W Tc
- Turn-Off Delay Time :
- 50 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 27.5nC @ 10V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 20A, 10V
- Length :
- 6.73mm
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Height :
- 2.39mm
- Turn On Delay Time :
- 6.5 ns
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 75W
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Number of Terminations :
- 2
- Series :
- UltraFET™
- Voltage - Rated DC :
- 60V
- Current Rating :
- 20A
- Datasheets
- HUFA76419D3ST

N-Channel Tape & Reel (TR) 37m Ω @ 20A, 10V ±16V 900pF @ 25V 27.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76419D3ST Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 900pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
HUFA76419D3ST Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
HUFA76419D3ST Applications
There are a lot of ON Semiconductor
HUFA76419D3ST applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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