HUFA76409D3
- Mfr.Part #
- HUFA76409D3
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 18A IPAK
- Stock
- 17,701
- In Stock :
- 17,701
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 18A, 10V
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 60V
- Drain-source On Resistance-Max :
- 0.075Ohm
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-252AA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±16V
- Series :
- UltraFET™
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 49W Tc
- Drain Current-Max (Abs) (ID) :
- 18A
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 60V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 485pF @ 25V
- Datasheets
- HUFA76409D3

N-Channel Tube 63m Ω @ 18A, 10V ±16V 485pF @ 25V 15nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76409D3S Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 485pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 18A.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
HUFA76409D3S Features
a 60V drain to source voltage (Vdss)
HUFA76409D3S Applications
There are a lot of Rochester Electronics, LLC
HUFA76409D3S applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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