HUFA75652G3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

475nC @ 20V

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

8m Ω @ 75A, 10V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

7.585pF @ 25V

Drain Current-Max (Abs) (ID) :

75A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

FET Type :

N-Channel

Power Dissipation-Max :

515W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Elements :

1

Pbfree Code :

yes

Surface Mount :

No

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

Not Applicable

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Single

Series :

UltraFET™

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.008Ohm