HUFA75639S3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

25m Ω @ 56A, 10V

Width :

9.65mm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

15 ns

Number of Elements :

1

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Factory Lead Time :

16 Weeks

Length :

10.67mm

Voltage - Rated DC :

100V

Element Configuration :

Single

Current Rating :

56A

Number of Pins :

3

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Transistor Element Material :

SILICON

Power Dissipation-Max :

200W Tc

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Turn-Off Delay Time :

20 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

60ns

Gate to Source Voltage (Vgs) :

20V

Height :

4.83mm

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Fall Time (Typ) :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Vgs (Max) :

±20V

Power Dissipation :

200W

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Weight :

1.31247g

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101, UltraFET™

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.025Ohm

Continuous Drain Current (ID) :

56A

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

2

Published :

2002

FET Type :

N-Channel

ECCN Code :

EAR99