HTMN5130SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.13Ohm

DS Breakdown Voltage-Min :

55V

Rise Time :

2.5ns

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reference Standard :

AEC-Q101

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 10V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

55V

Turn On Delay Time :

3 ns

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

2.6A

Number of Pins :

8

Fall Time (Typ) :

6.1 ns

Max Power Dissipation :

1.7W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Transistor Element Material :

SILICON

FET Feature :

Standard

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Published :

2015

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

218.7pF @ 25V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

13.5 ns

Pulsed Drain Current-Max (IDM) :

8A

Factory Lead Time :

21 Weeks