H5N2522LSTL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.18ohm

Number of Terminations :

2

Mount :

Surface Mount

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Terminal Position :

Single

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

75W Tc

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

250V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

20A

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

250V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Pulsed Drain Current-Max (IDM) :

60A

Package / Case :

SC-83

Published :

2010

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Pbfree Code :

yes