H5N2512FN-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-220AB

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Manufacturer :

Renesas Electronics Corporation

Product Status :

Active

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Number of Terminals :

3

Power Dissipation-Max (Abs) :

35 W

Package :

Bulk

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

18 A

Pin Count :

4

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

250 V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Series :

*

Number of Elements :

1

Drain-source On Resistance-Max :

0.105 Ω

Pulsed Drain Current-Max (IDM) :

72 A

Brand Name :

Renesas

Surface Mount :

No

Subcategory :

FET General Purpose Power