H5N2521FN-E#T2

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - Bipolar (BJT) - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Status :

Active

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Manufacturer :

Renesas Electronics Corporation

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Number of Elements :

1

Case Connection :

Isolated

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminals :

3

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

6 A

DS Breakdown Voltage-Min :

250 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Series :

*

Terminal Form :

THROUGH-HOLE

Package :

Bulk

Power Dissipation-Max (Abs) :

20 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

2.2 Ω

Subcategory :

FET General Purpose Power

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

3 A