H5N2007FN-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Package :

Bulk

Pin Count :

4

DS Breakdown Voltage-Min :

200 V

Drain-source On Resistance-Max :

0.047 Ω

Number of Terminals :

3

Transistor Application :

SWITCHING

Manufacturer :

Renesas Electronics Corporation

Number of Elements :

1

Subcategory :

FET General Purpose Power

Package Shape :

RECTANGULAR

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

25 A

Product Status :

Active

Power Dissipation-Max (Abs) :

30 W

Brand Name :

Renesas

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Unknown

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

100 A

Series :

*

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3