FZT751TA
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- Mfr.Part #
- FZT751TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A SOT223-3
- Stock
- 833
- In Stock ：
- 833
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 140MHz
- Collector Base Voltage (VCBO) :
- 80V
- Pin Count :
- 4
- Base Part Number :
- FZT751
- Voltage - Rated DC :
- -60V
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 140MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Published :
- 2013
- Width :
- 3.7mm
- hFE Min :
- 100
- Number of Elements :
- 1
- Height :
- 1.65mm
- Package / Case :
- TO-261-4, TO-261AA
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- -3A
- Transition Frequency :
- 140MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- Terminal Position :
- Dual
- Weight :
- 7.994566mg
- Packaging :
- Cut Tape (CT)
- Power Dissipation :
- 3W
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Continuous Collector Current :
- -3A
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Termination :
- SMD/SMT
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -450mV
- Voltage :
- 60V
- Pbfree Code :
- No
- Current :
- 3A
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 2W
- JESD-30 Code :
- R-PDSO-G4
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Length :
- 6.7mm
- Max Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Datasheets
- FZT751TA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT751TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 2V.The collector emitter saturation voltage is -450mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -3A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In the part, the transition frequency is 140MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
FZT751TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -450mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 140MHz
FZT751TA Applications
There are a lot of Diodes Incorporated
FZT751TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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