FZT7053TA
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- Mfr.Part #
- FZT7053TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 1.5A SOT223
- Stock
- 353
- In Stock ：
- 353
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.7mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Weight :
- 7.994566mg
- Height :
- 1.65mm
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Width :
- 3.7mm
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 1.5A
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- hFE Min :
- 10000
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- Max Power Dissipation :
- 6.25W
- Contact Plating :
- Tin
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 200nA
- JESD-609 Code :
- e3
- Frequency - Transition :
- 200MHz
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 5V
- Transition Frequency :
- 200MHz
- Power - Max :
- 1.25W
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 12V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- FZT7053
- JESD-30 Code :
- R-PDSO-G4
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Max Collector Current :
- 1.5A
- Terminal Position :
- Dual
- Datasheets
- FZT7053TA
NPN - Darlington -55°C~150°C TJ 200nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT7053TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 1A 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1.5A for high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
FZT7053TA Features
the DC current gain for this device is 1000 @ 1A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
a transition frequency of 200MHz
FZT7053TA Applications
There are a lot of Diodes Incorporated
FZT7053TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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