FZT749TA
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- Mfr.Part #
- FZT749TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A SOT223-3
- Stock
- 857
- In Stock ：
- 857
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Width :
- 3.7mm
- Transition Frequency :
- 160MHz
- Voltage - Rated DC :
- -25V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Gain Bandwidth Product :
- 160MHz
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Continuous Collector Current :
- -3A
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 35V
- Collector Emitter Breakdown Voltage :
- 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 3A
- Collector Emitter Voltage (VCEO) :
- 25V
- Radiation Hardening :
- No
- Package / Case :
- TO-261-4, TO-261AA
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Current Rating :
- -3A
- Max Breakdown Voltage :
- 25V
- Packaging :
- Cut Tape (CT)
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Length :
- 6.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Current :
- 3A
- Base Part Number :
- FZT749
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Frequency :
- 160MHz
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -400mV
- Transistor Application :
- SWITCHING
- Voltage :
- 25V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Height :
- 1.65mm
- Datasheets
- FZT749TA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT749TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 2V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 3A volts at its maximum.
FZT749TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 160MHz
FZT749TA Applications
There are a lot of Diodes Incorporated
FZT749TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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