FZT593TA
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- Mfr.Part #
- FZT593TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT223-3
- Stock
- 1,051
- In Stock ：
- 1,051
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Continuous Collector Current :
- -1A
- Terminal Finish :
- Matte Tin (Sn)
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Published :
- 2000
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Saturation Voltage :
- -300mV
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- FZT593
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Length :
- 6.7mm
- Max Power Dissipation :
- 2W
- Power Dissipation :
- 2W
- Max Breakdown Voltage :
- 100V
- Transition Frequency :
- 50MHz
- Width :
- 3.7mm
- REACH SVHC :
- No SVHC
- Current Rating :
- -1A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 100V
- Voltage - Rated DC :
- -100V
- Gain Bandwidth Product :
- 50MHz
- Factory Lead Time :
- 15 Weeks
- Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Datasheets
- FZT593TA
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT593TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 1A volts at its maximum.
FZT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
FZT593TA Applications
There are a lot of Diodes Incorporated
FZT593TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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