FZT549TA
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- Mfr.Part #
- FZT549TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SOT223-3
- Stock
- 2,610
- In Stock ：
- 2,610
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 35V
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 1A
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Width :
- 3.7mm
- Transition Frequency :
- 100MHz
- Length :
- 6.7mm
- Voltage - Rated DC :
- -30V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 200mA, 2A
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- -1A
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Continuous Collector Current :
- -1A
- Collector Emitter Breakdown Voltage :
- 30V
- Max Breakdown Voltage :
- 30V
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 7.994566mg
- Height :
- 1.65mm
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 4
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- FZT549
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -750mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Datasheets
- FZT549TA
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT549TA Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 200mA, 2A.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1A volts.
FZT549TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
FZT549TA Applications
There are a lot of Diodes Incorporated
FZT549TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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