FZT558TA
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- Mfr.Part #
- FZT558TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.2A SOT223-3
- Stock
- 16,050
- In Stock ：
- 16,050
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 50MHz
- Width :
- 3.7mm
- Voltage - Rated DC :
- -400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Weight :
- 7.994566mg
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -500mV
- Published :
- 2006
- Factory Lead Time :
- 13 Weeks
- Height :
- 1.65mm
- Continuous Collector Current :
- -200mA
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 200mA
- Packaging :
- Cut Tape (CT)
- Max Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- -5V
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Element Configuration :
- Single
- Power Dissipation :
- 3W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Frequency :
- 50MHz
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.7mm
- JESD-30 Code :
- R-PDSO-G4
- Power - Max :
- 2W
- Collector Base Voltage (VCBO) :
- 400V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Base Part Number :
- FZT558
- Current Rating :
- -200mA
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 50MHz
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 400V
- Mount :
- Surface Mount
- Datasheets
- FZT558TA
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT558TA Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 6mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 200mA volts.
FZT558TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 50MHz
FZT558TA Applications
There are a lot of Diodes Incorporated
FZT558TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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