FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 13,269
- In Stock ：
- 13,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- hFE Min :
- 250
- Collector Base Voltage (VCBO) :
- -60V
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Emitter Voltage (VCEO) :
- 60V
- Published :
- 2017
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Number of Elements :
- 1
- Frequency :
- 75MHz
- Max Collector Current :
- 2A
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 75MHz
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Max Power Dissipation :
- 500mW
- Weight :
- 30mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Pbfree Code :
- yes
- Length :
- 2.92mm
- Height :
- 940μm
- Current Rating :
- -2A
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.4mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Power Dissipation :
- 500mW
- Transistor Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Voltage - Rated DC :
- -60V
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- FSB660
- Max Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 75MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Datasheets
- FSB660A
FSB660A Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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