FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 13,269
- In Stock ：
- 13,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 75MHz
- Power Dissipation :
- 500mW
- Gain Bandwidth Product :
- 75MHz
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 300mV
- Length :
- 2.92mm
- Current Rating :
- -2A
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Height :
- 940μm
- Factory Lead Time :
- 20 Weeks
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 75MHz
- Weight :
- 30mg
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 2A
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Published :
- 2017
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 250
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -60V
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 500mW
- Collector Base Voltage (VCBO) :
- -60V
- REACH SVHC :
- No SVHC
- Width :
- 1.4mm
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Base Part Number :
- FSB660
- Datasheets
- FSB660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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