FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 13,269
- In Stock ：
- 13,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- -2A
- hFE Min :
- 250
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 300mV
- Emitter Base Voltage (VEBO) :
- -5V
- Length :
- 2.92mm
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Base Part Number :
- FSB660
- Published :
- 2017
- Voltage - Rated DC :
- -60V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 75MHz
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -60V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Frequency :
- 75MHz
- Width :
- 1.4mm
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- Factory Lead Time :
- 20 Weeks
- Transition Frequency :
- 75MHz
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 60V
- Weight :
- 30mg
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Power Dissipation :
- 500mW
- Height :
- 940μm
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- FSB660A
FSB660A Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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