FSB660
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- Mfr.Part #
- FSB660
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 53,094
- In Stock ：
- 53,094
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Collector Base Voltage (VCBO) :
- -60V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 75MHz
- Voltage - Rated DC :
- -60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 2A
- Frequency :
- 75MHz
- Radiation Hardening :
- No
- hFE Min :
- 250
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Height :
- 940μm
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Weight :
- 30mg
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 75MHz
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 500mW
- Length :
- 2.92mm
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- FSB660
- Factory Lead Time :
- 20 Weeks
- Published :
- 2017
- Max Power Dissipation :
- 500mW
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 300mV
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Current Rating :
- -2A
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Datasheets
- FSB660
FSB660 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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