FSB660
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- Mfr.Part #
- FSB660
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 53,094
- In Stock ：
- 53,094
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Factory Lead Time :
- 20 Weeks
- Gain Bandwidth Product :
- 75MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Width :
- 1.4mm
- Radiation Hardening :
- No
- Current Rating :
- -2A
- Collector Emitter Saturation Voltage :
- 300mV
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- -60V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 500mW
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Weight :
- 30mg
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- Published :
- 2017
- Voltage - Rated DC :
- -60V
- Length :
- 2.92mm
- Power Dissipation :
- 500mW
- Height :
- 940μm
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Base Part Number :
- FSB660
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 250
- Number of Elements :
- 1
- Frequency :
- 75MHz
- Transistor Type :
- PNP
- Transition Frequency :
- 75MHz
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 2A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Datasheets
- FSB660
FSB660 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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