FSB660
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- Mfr.Part #
- FSB660
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 53,094
- In Stock ：
- 53,094
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Factory Lead Time :
- 20 Weeks
- Radiation Hardening :
- No
- Published :
- 2017
- Max Collector Current :
- 2A
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 75MHz
- Transition Frequency :
- 75MHz
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -60V
- Collector Emitter Saturation Voltage :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 75MHz
- Height :
- 940μm
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 1.4mm
- Current Rating :
- -2A
- hFE Min :
- 250
- Terminal Finish :
- Tin (Sn)
- Length :
- 2.92mm
- Packaging :
- Tape and Reel (TR)
- Weight :
- 30mg
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 500mW
- Max Power Dissipation :
- 500mW
- Base Part Number :
- FSB660
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Collector Base Voltage (VCBO) :
- -60V
- Datasheets
- FSB660
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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