FSB619
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- Mfr.Part #
- FSB619
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT23-3
- Stock
- 11,013
- In Stock ：
- 11,013
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Base Part Number :
- FSB619
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 500mW
- Max Collector Current :
- 2A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Length :
- 2.92mm
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 25V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 300
- Current Rating :
- 2A
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Weight :
- 30mg
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 320mV
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 50mA, 2A
- Published :
- 2008
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Height :
- 940μm
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- FSB619
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB619 Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 50mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 2A volts is possible.
FSB619 Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 50mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
FSB619 Applications
There are a lot of ON Semiconductor
FSB619 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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