FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 32,009
- In Stock ：
- 32,009
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 250
- Length :
- 2.92mm
- Factory Lead Time :
- 20 Weeks
- Current Rating :
- -2A
- Terminal Form :
- Gull wing
- Power Dissipation :
- 500mW
- Collector Emitter Saturation Voltage :
- 300mV
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 75MHz
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Packaging :
- Tape and Reel (TR)
- Published :
- 2017
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Width :
- 1.4mm
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- -60V
- Gain Bandwidth Product :
- 75MHz
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 940μm
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Weight :
- 30mg
- Lead Free :
- Lead Free
- Frequency :
- 75MHz
- Base Part Number :
- FSB660
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Collector Base Voltage (VCBO) :
- -60V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- PNP
- Datasheets
- FSB660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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