FS150R12KT4BOSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Gate-Emitter Voltage-Max :

20V

JESD-30 Code :

R-XUFM-X35

Package / Case :

Module

Polarity/Channel Type :

N-Channel

Turn On Time :

165 ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 150A

Power - Max :

750W

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

750W

Number of Terminations :

35

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

UPPER

Configuration :

Three Phase Inverter

Surface Mount :

No

Terminal Form :

UNSPECIFIED

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Pbfree Code :

No

Turn Off Time-Nom (toff) :

605 ns

Number of Elements :

6

NTC Thermistor :

yes

Voltage - Collector Emitter Breakdown (Max) :

1200V

Halogen Free :

Not Halogen Free

Mounting Type :

Chassis Mount

VCEsat-Max :

2.1 V

Pin Count :

35

Current - Collector (Ic) (Max) :

150A

Lead Free :

Contains Lead

Case Connection :

Isolated

Input :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2002

IGBT Type :

Trench Field Stop