FS150R12KE3BOSA1
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- Mfr.Part #
- FS150R12KE3BOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 200A 700W
- Stock
- 52
- In Stock ：
- 52
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Current - Collector Cutoff (Max) :
- 5mA
- NTC Thermistor :
- yes
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Terminal Position :
- UPPER
- JESD-30 Code :
- R-XUFM-X35
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 150A
- Input Capacitance (Cies) @ Vce :
- 10.5nF @ 25V
- Number of Elements :
- 6
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 200A
- Pbfree Code :
- No
- Halogen Free :
- Not Halogen Free
- Turn On Time :
- 340 ns
- Case Connection :
- Isolated
- Power - Max :
- 700W
- Factory Lead Time :
- 16 Weeks
- Published :
- 2002
- Operating Temperature :
- -40°C~125°C TJ
- Polarity/Channel Type :
- N-Channel
- IGBT Type :
- NPT
- Transistor Element Material :
- SILICON
- Configuration :
- Three Phase Inverter
- Turn Off Time-Nom (toff) :
- 610 ns
- Package / Case :
- Module
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Pin Count :
- 35
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input :
- Standard
- Surface Mount :
- No
- Number of Terminations :
- 35
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FS150R12KE3BOSA1
FS150R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FS150R12KE3BOSA1 Description
FS150R12KE3BOSA1 is a 1200v IGBT. The transistor FS150R12KE3BOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Broadband fixed line access, Enterprise systems, and Enterprise machine due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS150R12KE3BOSA1 is in the tray package with 700W power dissipation.
FS150R12KE3BOSA1 Features
Collector-emitter voltage: 1200V
DC-collector current Tc = 80°C: 150A
Surge forward current tp= 10 ms, Tvj= 25°C: 300A
Gate-emitter peak voltage VGEs: +/-20 V
Gate-emitter leakage current VcE=0 V,VGE= 20V, Tvj = 25°C IGEs: 400 nA
FS150R12KE3BOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Broadband fixed line access
Enterprise systems
Enterprise machine
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