FS150R07N3E4BOSA1

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Mfr.Part #
FS150R07N3E4BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 650V 150A 430W
Stock
332
In Stock :
332

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Configuration :
Three Phase Inverter
Input :
Standard
Operating Temperature :
-40°C~150°C TJ
Current - Collector (Ic) (Max) :
150A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Number of Elements :
6
Power - Max :
430W
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 150A
Input Capacitance (Cies) @ Vce :
9.3nF @ 25V
Turn On Time :
180 ns
Published :
2012
Transistor Application :
POWER CONTROL
Number of Terminations :
35
JESD-30 Code :
R-XUFM-X35
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
No
Terminal Position :
UPPER
IGBT Type :
Trench Field Stop
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Voltage - Collector Emitter Breakdown (Max) :
650V
Pin Count :
35
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
1mA
Case Connection :
Isolated
Mounting Type :
Chassis Mount
Turn Off Time-Nom (toff) :
450 ns
Factory Lead Time :
16 Weeks
Package / Case :
Module
Terminal Form :
UNSPECIFIED
NTC Thermistor :
yes
Datasheets
FS150R07N3E4BOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FS150R07N3E4BOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Number of Terminations:35, Mounting Type:Chassis Mount, Package / Case:Module, FS150R07N3E4BOSA1 pinout, FS150R07N3E4BOSA1 datasheet PDF, FS150R07N3E4BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FS150R07N3E4BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FS150R07N3E4BOSA1


FS150R07N3E4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FS150R07N3E4BOSA1 Description


The FS150R07N3E4BOSA1 is an EconoPACK?3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.



FS150R07N3E4BOSA1 Features


  • Electrical Features

  • Trench IGBT4

  • Tvjop=150°C

  • Increased blocking voltage capability to 650V

  • High Short Circuit Capability, Self Limiting Short Circuit Current

  • Mechanical Features

  • Solder Contact Technology

  • Standard Housing

  • Integrated NTC temperature sensor

  • Copper Base Plate



FS150R07N3E4BOSA1 Applications


  • Motor Drives

  • As a switch

  • Air conditioners

  • Refrigerators

  • Electric cars


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