FS150R12KE3GBOSA1
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- Mfr.Part #
- FS150R12KE3GBOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 200A 695W
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Factory Lead Time :
- 16 Weeks
- Lead Free :
- Contains Lead
- Input Capacitance (Cies) @ Vce :
- 10.5nF @ 25V
- JESD-30 Code :
- R-XUFM-X29
- Power Dissipation :
- 695W
- Max Collector Current :
- 200A
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input :
- Standard
- NTC Thermistor :
- yes
- Halogen Free :
- Not Halogen Free
- Mount :
- Screw
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 5mA
- IGBT Type :
- Trench Field Stop
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.7V
- Configuration :
- Three Phase Inverter
- Operating Temperature :
- -40°C~125°C
- Mounting Type :
- Chassis Mount
- Polarity/Channel Type :
- N-Channel
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 150A
- Series :
- EconoPACK™+
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Package / Case :
- Module
- Power - Max :
- 695W
- Turn On Time :
- 400 ns
- Terminal Position :
- UPPER
- Number of Elements :
- 6
- Pin Count :
- 29
- Number of Pins :
- 28
- Number of Terminations :
- 29
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Qualification Status :
- Not Qualified
- Turn Off Time-Nom (toff) :
- 810 ns
- Pbfree Code :
- No
- Terminal Form :
- UNSPECIFIED
- Case Connection :
- Isolated
- Published :
- 2002
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FS150R12KE3GBOSA1
FS150R12KE3GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FS150R12KE3GBOSA1 Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO ? 247 ? 4L package that provides significant reduction in Eon Losses compared to standard TO ? 247 ? 3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co ? packaged free wheeling diode with a low forward voltage.
FS150R12KE3GBOSA1 Features
? Extremely Efficient Trench with Field Stop Technology
? TJmax = 175 ° C
? Improved Gate Control Lowers Switching Losses
? Separate Emitter Drive Pin
? TO ? 247 ? 4L for Minimal Eon Losses
? Optimized for High Speed Switching
? These are Pb ? Free Devices
FS150R12KE3GBOSA1 Applications
? Solar Inverter
? Uninterruptible Power Inverter Supplies (UPS)
? Neutral Point Clamp Topology
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