FQD7N20LTM
- Mfr.Part #
- FQD7N20LTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 5
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Series :
- QFET®
- Mount :
- Surface Mount
- Current Rating :
- 5.5A
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 2.75A, 10V
- Element Configuration :
- Single
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2.5W
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 20 ns
- Drain-source On Resistance-Max :
- 0.78Ohm
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 500pF @ 25V
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Number of Terminations :
- 2
- Rise Time :
- 125ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- HTS Code :
- 8541.29.00.95
- Weight :
- 260.37mg
- Turn On Delay Time :
- 12 ns
- Fall Time (Typ) :
- 65 ns
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 22A
- Factory Lead Time :
- 10 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 200V
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 200V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 5.5A
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 5V
- Datasheets
- FQD7N20LTM

N-Channel Tape & Reel (TR) 750m Ω @ 2.75A, 10V ±20V 500pF @ 25V 9nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7N20LTM Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 22A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
FQD7N20LTM Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 22A.
FQD7N20LTM Applications
There are a lot of ON Semiconductor
FQD7N20LTM applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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