FQD7N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

5.8A

Power Dissipation-Max :

2.5W Ta 25W Tc

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.35Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.9A, 10V

Number of Terminations :

2

Number of Elements :

1

Terminal Position :

Single

Surface Mount :

yes

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

50 mJ

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Reach Compliance Code :

Unknown

Vgs (Max) :

±25V

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Series :

QFET®

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

23.2A