FQD7N10TM

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Mfr.Part #
FQD7N10TM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 5.8A DPAK
Stock
2,327
In Stock :
2,327

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Qualification Status :
COMMERCIAL
Number of Terminations :
2
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
5.8A
Avalanche Energy Rating (Eas) :
50 mJ
Reach Compliance Code :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Vgs (Max) :
±25V
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Series :
QFET®
DS Breakdown Voltage-Min :
100V
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Power Dissipation-Max :
2.5W Ta 25W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.35Ohm
Rds On (Max) @ Id, Vgs :
350m Ω @ 2.9A, 10V
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
5.8A Tc
Terminal Finish :
MATTE TIN
Pbfree Code :
yes
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
4V @ 250µA
Pulsed Drain Current-Max (IDM) :
23.2A
Peak Reflow Temperature (Cel) :
260
Packaging :
Tape and Reel (TR)
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Number of Elements :
1
Datasheets
FQD7N10TM
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQD7N10TM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FQD7N10TM pinout, FQD7N10TM datasheet PDF, FQD7N10TM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQD7N10TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQD7N10TM


N-Channel Tape & Reel (TR) 350m Ω @ 2.9A, 10V ±25V 250pF @ 25V 7.5nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD7N10TM Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 50 mJ.A device's maximum input capacitance is 250pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 5.8A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 23.2A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

FQD7N10TM Features


the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 23.2A.
a 100V drain to source voltage (Vdss)


FQD7N10TM Applications


There are a lot of Rochester Electronics, LLC
FQD7N10TM applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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