FQD7N10TM
- Mfr.Part #
- FQD7N10TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.8A DPAK
- Stock
- 2,327
- In Stock :
- 2,327
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Qualification Status :
- COMMERCIAL
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 5.8A
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±25V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Series :
- QFET®
- DS Breakdown Voltage-Min :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.35Ohm
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 2.9A, 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A Tc
- Terminal Finish :
- MATTE TIN
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 23.2A
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Number of Elements :
- 1
- Datasheets
- FQD7N10TM

N-Channel Tape & Reel (TR) 350m Ω @ 2.9A, 10V ±25V 250pF @ 25V 7.5nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7N10TM Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 50 mJ.A device's maximum input capacitance is 250pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 5.8A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 23.2A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQD7N10TM Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 23.2A.
a 100V drain to source voltage (Vdss)
FQD7N10TM Applications
There are a lot of Rochester Electronics, LLC
FQD7N10TM applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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