FQD7N10LTM
- Mfr.Part #
- FQD7N10LTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.8A DPAK
- Stock
- 15,248
- In Stock :
- 15,248
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2000
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.1mm
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Drain to Source Breakdown Voltage :
- 100V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Current Rating :
- 5.8A
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 5V
- Voltage - Rated DC :
- 100V
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 5.8A
- Weight :
- 260.37mg
- Threshold Voltage :
- 2V
- Power Dissipation :
- 2.5W
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 2.9A, 10V
- Length :
- 6.6mm
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 25V
- Rise Time :
- 100ns
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A Tc
- Height :
- 2.3mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Resistance :
- 350mOhm
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Turn-Off Delay Time :
- 17 ns
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Turn On Delay Time :
- 9 ns
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Fall Time (Typ) :
- 50 ns
- Series :
- QFET®
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- FQD7N10LTM

N-Channel Tape & Reel (TR) 350m Ω @ 2.9A, 10V ±20V 290pF @ 25V 6nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7N10LTM Description
A patented planar stripe and DMOS technology is used to make the FQD7N10LTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology was specifically designed to reduce on-state resistance, give improved switching performance, and have a high avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all good candidates for FQD7N10LTM MOSFETs.
FQD7N10LTM Features
-
Low Crss ( Typ. 12pF)
-
100% avalanche tested
-
5.8A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 2.9A
-
Low gate charge ( Typ. 4.6nC)
FQD7N10LTM Applications
-
LED TV
-
Lighting
-
Automotive electronics
-
Consumer electronics
-
Power supplies
-
DC-to-DC converters
-
Motor controllers
-
Radio-frequency (RF)
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