FQD2P40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation-Max :

2.5W Ta 38W Tc

Turn-Off Delay Time :

22 ns

Element Configuration :

Single

Lead Free :

Lead Free

Turn On Delay Time :

9 ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Current :

18A

Voltage :

400V

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

-400V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

25 ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.56A Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Rds On (Max) @ Id, Vgs :

6.5 Ω @ 780mA, 10V

Number of Terminations :

2

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.56A

FET Type :

P-Channel

ECCN Code :

EAR99

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Number of Pins :

3

Mount :

Surface Mount

Rise Time :

33ns

Factory Lead Time :

9 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

QFET®

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

RoHS Status :

ROHS3 Compliant