FQD2N100TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

1000V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

2.5W

Weight :

260.37mg

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Current Rating :

1.6A

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Turn-Off Delay Time :

25 ns

Number of Pins :

3

Fall Time (Typ) :

35 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

30V

Rise Time :

30ns

Published :

2013

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

2.5W Ta 50W Tc

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Mount :

Surface Mount

Turn On Delay Time :

13 ns

Pulsed Drain Current-Max (IDM) :

6.4A

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

1kV

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Height :

2.517mm

Radiation Hardening :

No

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

1.6A

Width :

6.1mm

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

9 Ω @ 800mA, 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Threshold Voltage :

5V

Voltage - Rated DC :

900V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

5 V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Resistance :

9Ohm

JESD-609 Code :

e3

Series :

QFET®

Element Configuration :

Single

Length :

6.6mm