FQD2N80TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

3V

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Series :

QFET®

Length :

6.6mm

Drain to Source Breakdown Voltage :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2000

Turn-Off Delay Time :

25 ns

Radiation Hardening :

No

Voltage - Rated DC :

800V

Width :

6.1mm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Continuous Drain Current (ID) :

1.8A

Number of Channels :

1

Gate to Source Voltage (Vgs) :

30V

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta 50W Tc

Number of Elements :

1

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 900mA, 10V

Nominal Vgs :

5 V

Vgs(th) (Max) @ Id :

5V @ 250μA

Max Junction Temperature (Tj) :

150°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.517mm

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Mounting Type :

Surface Mount

Weight :

260.37mg

Transistor Element Material :

SILICON

Rise Time :

30ns

Resistance :

6.3Ohm

Fall Time (Typ) :

28 ns

Power Dissipation :

2.5W

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Current Rating :

1.8A

Pbfree Code :

yes

Vgs (Max) :

±30V

Element Configuration :

Single

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Pulsed Drain Current-Max (IDM) :

7.2A

Lead Free :

Lead Free

Turn On Delay Time :

12 ns