FQD2N60CTM
- Mfr.Part #
- FQD2N60CTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 43,168
- In Stock :
- 43,168
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Series :
- QFET®
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 600V
- Turn On Delay Time :
- 9 ns
- Rise Time :
- 25ns
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 44W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current :
- 18A
- Height :
- 2.39mm
- Voltage - Rated DC :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 1.9A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 6.73mm
- Continuous Drain Current (ID) :
- 1.9A
- Fall Time (Typ) :
- 28 ns
- RoHS Status :
- ROHS3 Compliant
- Voltage :
- 650V
- Current Rating :
- 1.9A
- Power Dissipation :
- 2.5W
- Contact Plating :
- Tin
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 4 Weeks
- Rds On (Max) @ Id, Vgs :
- 4.7 Ω @ 950mA, 10V
- Turn-Off Delay Time :
- 24 ns
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 235pF @ 25V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Threshold Voltage :
- 4V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- Width :
- 6.22mm
- Datasheets
- FQD2N60CTM

N-Channel Tape & Reel (TR) 4.7 Ω @ 950mA, 10V ±30V 235pF @ 25V 12nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N60CTM Description
FQD2N60CTM belongs to the family of N-channel enhancement mode QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and high avalanche energy strength based on planar stripe and DMOS technology. Due to its high quality and reliable performance, FQD2N60CTM is well suited for switching mode power supplies, active power factor correction, and electronic lamp ballasts.
FQD2N60CTM Features
-
Low gate charge
-
Advanced switching performance
-
High avalanche energy strength
-
Planar stripe and DMOS technology
-
Available in the D-PAK package
FQD2N60CTM Applications
-
Electronic lamp ballasts
-
Active power factor correction
-
Switching mode power supplies
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