FQD1N60TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

600V

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

1A

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Series :

QFET®

Power Dissipation-Max :

2.5W Ta 30W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Terminal Finish :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 500mA, 10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Vgs (Max) :

±30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

50 mJ

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

4A