FQD10N20CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.6mm

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

Series :

QFET®

Number of Pins :

3

Factory Lead Time :

8 Weeks

Height :

2.3mm

ECCN Code :

EAR99

Qualification Status :

Not Qualified

FET Type :

N-Channel

Resistance :

360mOhm

Case Connection :

DRAIN

Voltage - Rated DC :

200V

Element Configuration :

Single

Power Dissipation-Max :

50W Tc

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

70 ns

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

72 ns

Power Dissipation :

50W

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Width :

6.1mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current Rating :

7.8A

Continuous Drain Current (ID) :

7.8A

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.8A Tc

Drain to Source Breakdown Voltage :

200V

Number of Terminations :

2

REACH SVHC :

No SVHC

Weight :

260.37mg

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Turn On Delay Time :

11 ns

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Plating :

Tin

Additional Feature :

FAST SWITCHING

Rds On (Max) @ Id, Vgs :

360m Ω @ 3.9A, 10V

Pbfree Code :

yes

Rise Time :

92ns

Operating Mode :

ENHANCEMENT MODE