FQD11P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Length :

6.6mm

Continuous Drain Current (ID) :

-9.4A

Published :

2004

Voltage - Rated DC :

-60V

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Resistance :

185mOhm

Rise Time :

40ns

Number of Terminations :

2

Element Configuration :

Single

JESD-609 Code :

e3

Current Rating :

-9.4A

REACH SVHC :

No SVHC

Threshold Voltage :

-4V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

Power Dissipation-Max :

2.5W Ta 38W Tc

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

4 Weeks

Number of Elements :

1

Power Dissipation :

2.5W

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

6.5 ns

Fall Time (Typ) :

45 ns

Series :

QFET®

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99

Width :

6.1mm

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Weight :

260.37mg

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Channels :

1

Height :

2.517mm

Rds On (Max) @ Id, Vgs :

185m Ω @ 4.7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Turn-Off Delay Time :

15 ns

Drain to Source Breakdown Voltage :

-60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE