FQD10N20LTF

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Mfr.Part #
FQD10N20LTF
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 200V 7.6A TO252
Stock
8,614
In Stock :
8,614

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
150ns
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
7.6A Tc
Fall Time (Typ) :
95 ns
Series :
QFET®
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
830pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
2.5W Ta 51W Tc
Current Rating :
7.6A
Continuous Drain Current (ID) :
7.6A
Published :
2016
Turn-Off Delay Time :
50 ns
Vgs(th) (Max) @ Id :
2V @ 250μA
Voltage - Rated DC :
200V
Rds On (Max) @ Id, Vgs :
360m Ω @ 3.8A, 10V
Weight :
260.37mg
Power Dissipation :
2.5W
Drain to Source Breakdown Voltage :
200V
Packaging :
Tape and Reel (TR)
RoHS Status :
RoHS Compliant
Mount :
Surface Mount
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 5V
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
Element Configuration :
Single
Datasheets
FQD10N20LTF
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD10N20LTF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FQD10N20LTF pinout, FQD10N20LTF datasheet PDF, FQD10N20LTF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD10N20LTF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD10N20LTF


N-Channel Tape & Reel (TR) 360m Ω @ 3.8A, 10V ±20V 830pF @ 25V 17nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD10N20LTF Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 830pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

FQD10N20LTF Features


a continuous drain current (ID) of 7.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns


FQD10N20LTF Applications


There are a lot of ON Semiconductor
FQD10N20LTF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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