FQD17P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

22 ns

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Rds On (Max) @ Id, Vgs :

135m Ω @ 6A, 10V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pulsed Drain Current-Max (IDM) :

48A

Element Configuration :

Single

Turn On Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Contact Plating :

Tin

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Lead Free :

Lead Free

Series :

QFET®

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Published :

2014

Length :

6.73mm

Rise Time :

100ns

Threshold Voltage :

-4V

Power Dissipation :

2.5W

Voltage - Rated DC :

-60V

Continuous Drain Current (ID) :

12mA

Width :

6.22mm

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

60 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Current Rating :

-12A

Power Dissipation-Max :

2.5W Ta 44W Tc

Gate to Source Voltage (Vgs) :

25V

Weight :

260.37mg

Number of Pins :

3

Drain to Source Breakdown Voltage :

-60V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Height :

2.39mm

Resistance :

135mOhm