FQD17N08LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7 ns

Turn-Off Delay Time :

20 ns

Pbfree Code :

yes

Continuous Drain Current (ID) :

12.9A

Drain to Source Breakdown Voltage :

80V

Fall Time (Typ) :

75 ns

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

12.9A Tc

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta 40W Tc

FET Type :

N-Channel

Mount :

Surface Mount

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Radiation Hardening :

No

Current Rating :

12.9A

Factory Lead Time :

4 Weeks

Number of Elements :

1

Power Dissipation :

2.5W

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Voltage - Rated DC :

80V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Weight :

260.37mg

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Rise Time :

290ns

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

100m Ω @ 6.45A, 10V

Vgs (Max) :

±20V

Series :

QFET®

Transistor Element Material :

SILICON