FQD17N08LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

80V

Drain-source On Resistance-Max :

0.115Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

100m Ω @ 6.45A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Reach Compliance Code :

Unknown

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 5V

Pulsed Drain Current-Max (IDM) :

51.6A

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

80V

Avalanche Energy Rating (Eas) :

100 mJ

Pbfree Code :

yes

Power Dissipation-Max :

2.5W Ta 40W Tc

Series :

QFET®

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

12.9A Tc

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

12.9A