FQD16N15TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11.8A Tc

JESD-609 Code :

e3

Number of Terminations :

2

Vgs (Max) :

±25V

Drain to Source Voltage (Vdss) :

150V

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Pbfree Code :

yes

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

11.8A

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

150V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Series :

QFET®

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

160m Ω @ 5.9A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

47.2A

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Drain-source On Resistance-Max :

0.16Ohm

Power Dissipation-Max :

2.5W Ta 55W Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

230 mJ

Mounting Type :

Surface Mount