FQB6N80TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

45 ns

Terminal Form :

Gull wing

Turn On Delay Time :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Qualification Status :

Not Qualified

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Rise Time :

70ns

Drain to Source Breakdown Voltage :

800V

Resistance :

1.95Ohm

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Lead Free :

Lead Free

Power Dissipation :

3.13W

Continuous Drain Current (ID) :

5.8A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Element Configuration :

Single

Number of Elements :

1

Weight :

1.31247g

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 2.9A, 10V

RoHS Status :

ROHS3 Compliant

Published :

2000

Power Dissipation-Max :

3.13W Ta 158W Tc

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

5V

Height :

4.83mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

9.65mm

Voltage - Rated DC :

800V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Contact Plating :

Tin

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Turn-Off Delay Time :

65 ns

Length :

10.67mm

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Series :

QFET®

Current Rating :

5.8A

Avalanche Energy Rating (Eas) :

680 mJ