FQB6N40CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

1 Ω @ 3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Continuous Drain Current (ID) :

6A

Factory Lead Time :

4 Weeks

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Qualification Status :

Not Qualified

Pbfree Code :

yes

Power Dissipation :

73W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

JESD-609 Code :

e3

Number of Terminations :

2

Number of Pins :

3

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Current Rating :

6A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Operating Mode :

ENHANCEMENT MODE

Weight :

1.31247g

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

73W Tc

Turn-Off Delay Time :

21 ns

Fall Time (Typ) :

38 ns

Voltage - Rated DC :

400V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

1Ohm

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

270 mJ

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

24A

Transistor Application :

SWITCHING

Rise Time :

65ns

Drain Current-Max (Abs) (ID) :

6A

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

FAST SWITCHING

Drain to Source Breakdown Voltage :

400V

ECCN Code :

EAR99