FQB6N70TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.13W Ta 142W Tc

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

600 mJ

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

24.8A

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

QFET®

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

700V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.1A, 10V

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Drain Current-Max (Abs) (ID) :

6.2A

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 25V

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

700V

Number of Elements :

1

Transistor Application :

SWITCHING

FET Type :

N-Channel

Pbfree Code :

yes