FQB6N25TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

250V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.13W Ta 63W Tc

FET Type :

N-Channel

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Number of Elements :

1

Drain-source On Resistance-Max :

1Ohm

Series :

QFET®

Avalanche Energy Rating (Eas) :

75 mJ

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

22A

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.75A, 10V

Drain Current-Max (Abs) (ID) :

5.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

250V